Event announcement date · TSMC
TSMC and ASML form initiative for 12-inch High-NA EUV photomasks
TSMC and ASML formed a collaborative industry initiative on September 7 to drive the transition to 12-inch EUV photomasks, targeting a pilot line by 2031 and advanced-node lithography readiness by 2033.
Why it matters
The companies say larger-format masks can improve High-NA scanner and fab productivity, lower chipmaking costs and remove stitching constraints that come with the current mask format. Those benefits and the 2031/2033 dates remain future targets rather than completed capability.
Original announcement / source · TSMC / ASML ↗